features 1 of 6 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . inp hbt SGL0263Z 1400mhz to 2500mhz silicon germanium cascadable low noise amplifier the SGL0263Z is a high performance sige hbt mmic low noise amplifier featuring 1 micron emitters with f t up to 50ghz. this device has an inter- nal temperature compensation circui t permitting operation directly from supply voltages as low as 2.5v. th e SGL0263Z has been characterized at v d =3v for low power and 4v for medium power applications. only two dc- blocking capacitors, 2 input matching components, a bias resistor, and an optional rf choke are required for operation from 1400mhz to 2500mhz. rf in rf out / v s v s temperature compensation circuit ? high input/output intercept ? low noise figure: 1.3db typ. at 1900mhz ? low power consumption ? single voltage supply opera- tion ? internal temperature com- pensation applications ? receivers, gps, rfid ? cellular, fixed wireless, land mobile ds111011 ? package: sot-363 SGL0263Z 1400mhz to 2500mhz sili- con germa- nium cascadable low noise amplifier parameter specification (v s =3v) specification (v s =4v) unit condition min. typ. max. min. typ. max. small signal gain 12.1 13.4 14.7 13.8 db 1900mhz 12.5 12.9 db 2100mhz 10.8 11.3 db 2400mhz output power at 1db compres- sion 3.5 5.5 11.4 dbm 1900mhz 6.8 12.3 dbm 2100mhz 7.9 12.8 dbm 2400mhz input third order intercept point tone spacing=1mhz, p out per tone=-13dbm 7. 5 9 . 5 1 5 .1 d b m 1 9 0 0 m h z 13.5 16.8 dbm 2100 mhz 15.5 18.4 dbm 2400mhz noise figure 1.3 1.7 1.9 db 1900mhz, z s =50 ? 1.5 2.1 db 2100 mhz, z s =50 ? 2.0 2.8 db 2400mhz, z s =50 ? input return loss 10.0 13.3 21.9 db 1900mhz output return loss 10.0 12.9 17.4 db 1900mhz reverse isolation 20.7 21.0 db 1900mhz device current 9.0 12.5 15.0 23.0 ma thermal resistance (junction to lead) 255 c/w test conditions: 1400mhz to 2500mhz application circuit, t lead =25c, z 0 =z l =50 ?
2 of 6 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SGL0263Z absolute maximum ratings parameter rating unit max device current (i d )45ma max device voltage (v d )5v max rf input power +10 dbm max junction temp (t j )+150c operating temp range (t l ) -40 to +85 c max storage temp +150 c esd 1a class msl 1 operation of this device beyond any one of these limits may cause permanent dam- age. for reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. bias conditions should also satisfy the following expression: i d v d <(t j -t l )/r th , j-l caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. ex tended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. rfmd green: rohs compliant per eu directive 2002/95/ec, halogen free per iec 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a fl ame retardant, and <2% antimony in solder. input ip3 vs. frequency over temperature 4 6 8 10 12 14 16 18 20 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 freq. (mhz) input ip3 (dbm) t=-40c, vs=3 v t=+25c, vs=3 v t=+85c, vs=3 v t=-40c, vs=4 v t=+25c, vs=4 v t=+85c, vs=4 v p1db vs. frequency over temperature 0 2 4 6 8 10 12 14 16 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 freq. (mhz) p1db (dbm) t=-40c, vs=3 v t=+25c, vs=3 v t=+85c, vs=3 v t=-40c, vs=4 v t=+25c, vs=4 v t=+85c, vs=4 v noise figure vs. frequency at t lead =+25c 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1400 1600 1800 2000 2200 2400 freq. (mhz) nf (db) vs=3 v vs=4 v typical rf performance over lead temperature at 3 v and 4 v -- 1400-2500 mhz evaluation board output ip3 vs. frequency over temperature 18 20 22 24 26 28 30 32 34 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 freq. (mhz) output ip3 (dbm) t=-40c, vs=3 v t=+25c, vs=3 v t=+85c, vs=3 v t=-40c, vs=4 v t=+25c, vs=4 v t=+85c, vs=4 v device voltage (vd) vs. device current (id) for t = -40c, +25c, & +85c load lines for vs =+5 volts, rs=43 w and 180 w 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 6 8 10 12 14 16 18 20 22 24 26 id (ma) vd (volts) t=-40c t=+25c t=+85c vs= +5 v, rs = 43 w vs = +5 v, rs = 180 w
3 of 6 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SGL0263Z 0 4 8 12 16 20 1300 1500 1700 1900 2100 2300 2500 frequency (mhz) s 21 (db) | s 11 | vs. frequency | s 21 | vs. frequency | s 12 | vs. frequency | s 22 | vs. frequency -30 -26 -22 -18 -14 -10 1300 1500 1700 1900 2100 2300 2500 frequency (mhz) s 12 (db) -30 -25 -20 -15 -10 -5 0 1300 1500 1700 1900 2100 2300 2500 frequency (mhz) s 11 (db) -30 -25 -20 -15 -10 -5 0 1300 1500 1700 1900 2100 2300 2500 frequency (mhz) s 22 (db) | s 11 | vs. frequency | s 21 | vs. frequency | s 12 | vs. frequency | s 22 | vs. frequency 0 4 8 12 16 20 1300 1500 1700 1900 2100 2300 2500 frequency (mhz) s 21 (db) -30 -26 -22 -18 -14 -10 1300 1500 1700 1900 2100 2300 2500 frequency (mhz) s 12 (db) -30 -25 -20 -15 -10 -5 0 1300 1500 1700 1900 2100 2300 2500 frequency (mhz) s 11 (db) -30 -25 -20 -15 -10 -5 0 1300 1500 1700 1900 2100 2300 2500 frequency (mhz) s 22 (db) typical rf performance at v s = 3 v -- 1400-2500 mhz evaluation board -- t lead =+25 c typical rf performance at v s = 4 v -- 1400-2500 mhz evaluation board -- t lead =+25 c
4 of 6 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SGL0263Z suggested pad layout package drawing dimensions in inches (millimeters) refer to drawing posted at www.rfmd.com for tolerances. pin function description 1n/c no electrical connection. provide an isolated (ungrounded) solder pad for mounting integrity. 3rf in rf input pin. this pin requires the use of an external dc-blocking capacitor chosen for the frequency of operation. 4dc bias voltage supply connection. bypass with suitable capacitors. 2, 5 gnd connection to ground. provide via holes as close to ground leads as possible to reduce ground inductance and achieve optimum rf performance. 6rf out/bias rf output and voltage supply. dc voltage is present on this pin, therefore a dc-blocking capacitor is necessary for proper operation. 0.026 0.075 0.016 0.035 notes: 1. provide a ground pad area under device pins 2 & 5 with plated via holes to the pcb ground plane. 2. we recommend 1 or 2 ounce copper. measure- ments for this data sheet were made on a 31 mil thick getek with 1 ounce copper on both sides.
5 of 6 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SGL0263Z 1400mhz to 2500mhz application circuit evaluation board layout c b sg l0263z l m1 z1 c d2 +v s l b z3 c m1 r b1 (opt) b1 (opt) c d1 r b2 5 4 6 3 rf input z2 c b rf output delay elements ref. des. z 0 (ohms) phase shift @ 2ghz (deg.) z1 50 11 z2 50 13 z3 50 6 application circuit element values reference designator value manufact urer & part no. l b 27 nh toko ll1608-fs27nj l m1 1.2 nh toko ll1608-fs1r2nj b1 1 1500 ohms @100 mhz fair-rite 2508051527y0 ferrite bead c b , c d1 0.1 uf samsung cl10b103kbnc c d2 22 pf rohm mch185aa220djk c m1 1.0 pf rohm mch185a1r0ck r b1 1 47 ohms phillips 9c06031a47r0 jl hft r b2 2 0 ohms phillips 9c06031a0r00 jl hft notes: 1. b1 and r b1 provide improved k-factor but are optional. 2. r b2 may be introduced as a voltage dropping resistor for use with supply voltages greater than the desired device bias voltage. note: circuit board dielectric material is getek,ml200c ecb-101761 rf in microdevices sirenza rf out rev b +v s gnd SGL0263Z b 1 c b r b 2 l b c b c d1 c d2 r b 1 c m1 l m 1
6 of 6 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . SGL0263Z alternate marking with trace code only ordering information part number description SGL0263Z 7" reel with 3000 pieces SGL0263Zsq sample bag with 25 pieces SGL0263Zsr 7" reel with 100 pieces SGL0263Zpck1 1400mhz to 2500mhz pcba with 5-piece sample bag 1 2 3 6 5 4
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